Defect limitations in Cu2ZnSn(S, Se)4 solar cells utilizing an In2S3 buffer layer
نویسندگان
چکیده
منابع مشابه
Fabrication Of Cu(In,Ga)Se2 Solar Cells With In2S3 Buffer Layer By Two Stage Process
Cu(In,Ga)Se2 thin films (CIGS) on metallic substrate (titanium, molybdenum, aluminum, stainless steel) were prepared by a two-step selenization of Co-evaporated metallic precursors in Se-containing environment under N2 gas flow. Structural properties of prepared thin film were studied. To characterize the optical quality and intrinsic defect nature low-temperature photoluminescence, were perfor...
متن کاملfabrication of cu(in,ga)se2 solar cells with in2s3 buffer layer by two stage process
cu(in,ga)se2 thin films (cigs) on metallic substrate (titanium, molybdenum, aluminum, stainless steel) were prepared by a two-step selenization of co-evaporated metallic precursors in se-containing environment under n2 gas flow. structural properties of prepared thin film were studied. to characterize the optical quality and intrinsic defect nature low-temperature photoluminescence, were perfor...
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Here, the effect of lightly Niobium doped TiO2 layer on the performance of perovskite solar cells has been studied by using solar cell capacitance simulator (SCAPS). N addition, the effects of Niobium concentration, buffer film thickness and operating temperature on the performance of the perovskite solar cell are investigated. For doping level of 3.0 mol% into the TiO2 layer, cell efficiency o...
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The performance of the Cu2ZnSnS4 based solar cell is investigated using a simulation program called Solar Cell Capacitance Simulator (SCAPS). The cell structure is based on Cu2ZnSnS4 (CZTS) compound semiconductor as the absorber layer, n-doped and un-doped (i) zinc oxide as the window layer, In2S3 as the buffer layer. We study the influence of the defect density, carrier density, thickness of t...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2020
ISSN: 0021-8979,1089-7550
DOI: 10.1063/5.0002372